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AON6403L
P-Channel Power Transistor
General Description
The AON6403L combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications.
Product Summary
VDS ID (at VGS= -10V) RDS(ON) (at VGS= -10V) RDS(ON) (at VGS = -4.5V) -30V -85A < 3.1m < 4.3m
- RoHS Compliant - Halogen Free
100% UIS Tested 100% Rg Tested
D
Top View Fits SOIC8 footprint !
G S
DFN5X6 Absolute Maximum Ratings TA=25C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Continuous Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH TC=25C Power Dissipation
B C C
Maximum -30 20 -85 -67 -280 -21 -17 -72 259 83 33 2.3 1.4 -55 to 150
Units V V A
TC=25C TC=100C TA=25C TA=70C
ID IDM IDSM IAR EAR PD PDSM TJ, TSTG
A A mJ W W C
TC=100C TA=25C TA=70C
Power Dissipation A
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A AD Maximum Junction-to-Ambient Maximum Junction-to-Case
Symbol
t 10s Steady-State Steady-State
RJA RJC
Typ 14 40 1
Max 17 55 1.5
Units C/W C/W C/W
Rev 1: January 2009
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Page 1 of 6
AON6403L
Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter Conditions ID=-250A, VGS=0V VDS=-30V, VGS=0V TJ=55C VDS=0V, VGS= 20V VDS=VGS ID=-250A VGS=-10V, VDS=-5V VGS=-10V, ID=-20A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=-4.5V, ID=-20A Forward Transconductance VDS=-5V, ID=-20A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current 6100 TJ=125C -1.2 -280 2.6 3.6 3.5 82 -0.7 -1 -85 7600 1320 1050 2 163 79 22 33 13 18 135 52 IF=-20A, dI/dt=500A/s 21 63 26 78 32 94 9120 1720 1470 4 196 95 26 46 3.1 4.4 4.3 -1.7 Min -30 -1 -5 100 -2.2 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz
930 630 1 130
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
VGS=-10V, VDS=-15V, ID=-20A
63 18 20
VGS=-10V, VDS=-15V,
RL=0.75, RGEN=3
Body Diode Reverse Recovery Charge IF=-20A, dI/dt=500A/s
A. The value of RJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The Power dissipation PDSM is based on R JA and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design, and the maximum temperature of 150C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=150C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C. Ratings are based on low frequency and duty cycles to keep initial TJ =25C.Maximum UIS current limited by test equipment. D. The RJA is the sum of the thermal impedence from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by package. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. Rev 1: January 2009 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 1: January 2009
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Page 2 of 6
AON6403L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
150 -3.5V 120 90 -ID(A) -4V -10V -ID (A) -3V 90 60 30 0 0 1 2 3 4 5 0 1 2 3 4 5 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) 1.6 Normalized On-Resistance VGS=-10V ID=-20A 125C 25C 150 VDS=-5V 120
60 30
VGS=-2.5V
0 -VDS (Volts) Fig 1: On-Region Characteristics (Note E) 5
4 RDS(ON) (m)
VGS=-4.5V
1.4
3
1.2
2
VGS=-10V
1
17 5 VGS=-4.5V 2 ID=-20A 10
1 0 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 5 10
0.8 0 25 50 75 100 125 150 175 Temperature (C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E)
9 8 7 RDS(ON) (m) 6 5 4 3 2 1 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 25C 125C -IS (A) ID=-20A
1.0E+02 1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) 25C 125C
40
Rev 1: January 2009
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Page 3 of 6
AON6403L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 VDS=-15V ID=-20A Capacitance (pF) 12000 10000 Ciss 8000 6000 4000 2000 0 0 90 120 150 Qg (nC) Figure 7: Gate-Charge Characteristics 30 60 180 0 Crss 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 5 10 30 Coss
8 -VGS (Volts)
6
4
2
0
1000.0 100.0
400 350
RDS(ON) limited DC
10s
10s
Power (W)
300 250 200 150 100 50
-ID (Amps)
10.0 1.0 0.1 0.0 0.01
100s 1ms 10ms
TJ(Max)=150C TC=25C
17 5 2 10
TJ(Max)=150C TC=25C
0.1 1 -VDS (Volts) 10 100
0 0.0001
0.001
0.01
0.1
1
Figure 9: Maximum Forward Biased Safe Operating Area (Note F)
10 ZJC Normalized Transient Thermal Resistance
Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
0
10
D=Ton/T TJ,PK=TC+PDM.ZJC.RJC RJC=1.5C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
1
0.1
PD Ton
0.01 0.00001
Single Pulse 0.0001 0.001 0.01 0.1 1
T 10 100
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 1: January 2009
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Page 4 of 6
AON6403L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
230.0 -IAR (A) Peak Avalanche Current 200.0 Power Dissipation (W) 170.0 140.0 110.0 80.0 50.0 20.0 0.000001 TA=125C TA=150C TA=25C TA=100C 90 80 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 TCASE (C) Figure 13: Power De-rating (Note F)
0.00001 0.0001 0.001 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability (Note C)
100 80
10000
TA=25C
-Current rating ID(A)
1000
Power (W)
60 40 20 0 0 25 50 75 100 125 150 TCASE (C) Figure 14: Current De-rating (Note F)
100
10
17 5 2 10
1 0.0001
0.01
1
100
10000
Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
0 18
10 ZJA Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=55C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
40
0.1 PD Single Pulse 0.001 0.0001 0.001 0.01 0.1 1 Ton 10
0.01
T 100 1000
Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 1: January 2009
www.aosmd.com
Page 5 of 6
AON6403L
Gate Charge Test Circuit & W aveform
Vgs Qg -10V
VDC
VDC
DUT Vgs Ig
Resistive Switching Test Circuit & Waveforms
RL Vds Vgs Vgs Rg Vgs Vds DUT
VDC
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L Vds Id Vgs Rg DUT Vgs Vgs Vgs
VDC
Diode Recovery Test Circuit & Waveforms
Vds + DUT Vgs
t rr
Vds -
Isd Vgs
L
VDC
+ Vdd -Vds
Ig
Rev 1: January 2009
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+
-
+
Charge
ton td(on) tr td(off) toff tf
+
-
-
+
-
Vds
Qgs
Qgd
Vdd
90%
10%
E AR= 1/2 LIAR
2
Vds BVDSS Vdd Id I AR
Q rr = - Idt
-Isd
-I F
dI/dt -I RM Vdd
Page 6 of 6

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